검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures Kong BH, Han WS, Cho HK, Kim MY, Choi RJ, Kim BK Journal of Crystal Growth, 310(23), 4916, 2008 |
| 2 |
Quantitative analysis of variant IIICuAu-I-type ordering of AlxGa1-xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction van Niftrik ATJ, Bauhuis GJ, Schermer JJ, Kim HJ, Voncken MMAJ, Mulder P, Larsen PK Journal of Crystal Growth, 289(1), 48, 2006 |
| 3 |
Characteristics of misfit dislocations in the GaInP/GaAs heterostructures grown by metalorganic chemical vapor deposition Gong JR, Hou SJ, Tseng SF Journal of Crystal Growth, 253(1-4), 46, 2003 |
| 4 |
Charge storage and screening of the internal field in GaN/AlGaN quantum wells Traetta G, Di Carlo A, Reale A, Lugli P, Lomascolo M, Passaseo A, Cingolani R, Bonfiglio A, Berti M, Napolitani E, Natali M, Sinha SK, Drigo AV Journal of Crystal Growth, 230(3-4), 492, 2001 |