1 |
Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy Halder NN, Kelrich A, Kauffmann Y, Cohen S, Ritter D Journal of Crystal Growth, 463, 10, 2017 |
2 |
Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate Mitsuhara M, Watanabe N, Yokoyama H, Iga R, Shigekawa N Journal of Crystal Growth, 449, 86, 2016 |
3 |
Tapering and crystal structure of indium phosphide nanowires grown by selective area vapor liquid solid epitaxy Greenberg Y, Kelrich A, Calahorra Y, Cohen S, Ritter D Journal of Crystal Growth, 389, 103, 2014 |
4 |
Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE) Kuwano N, Ryu Y, Mitsuhara M, Lin CH, Uchiyama S, Maruyama T, Suzuki Y, Naritsuka S Journal of Crystal Growth, 401, 409, 2014 |
5 |
Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy Naritsuka S, Lin CH, Uchiyama S, Maruyama T Journal of Crystal Growth, 378, 303, 2013 |
6 |
Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template Chen WC, Kuo SY, Lai FI, Lin WT, Hsiao CN Thin Solid Films, 529, 169, 2013 |
7 |
Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy Lin CH, Abe R, Uchiyama S, Maruyama T, Naritsuka S Journal of Crystal Growth, 352(1), 214, 2012 |
8 |
Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy Lai FI, Kuo SY, Lin WT, Chen WC, Hsiao CN, Liu YK, Shen JL Journal of Crystal Growth, 320(1), 32, 2011 |
9 |
Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE Lai FI, Kuo SY, Chen WC, Lin WT, Wang WL, Chang L, Hsiao CN, Chiang CH Journal of Crystal Growth, 326(1), 37, 2011 |
10 |
Growth and characterization of AlxGa1-xN via NH3-based metal-organic molecular beam epitaxy Billingsley D, Henderson W, Pritchett D, Doolittle WA Journal of Crystal Growth, 311(5), 1328, 2009 |