검색결과 : 19건
No. | Article |
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1 |
Growth of III-N/graphene heterostructures in single vapor phase epitaxial process Lundin WV, Zavarin EE, Sakharov AV, Zakheim DA, Davydov VY, Smirnov AN, Eliseyev IA, Yagovkina MA, Brunkov PN, Lundina EY, Markov LK, Tsatsulnikov AF Journal of Crystal Growth, 504, 1, 2018 |
2 |
Etching effect of tertiary-butyl chloride during InP-nanowire growth Tateno K, Zhang GQ, Gotoh H Journal of Crystal Growth, 402, 299, 2014 |
3 |
Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon Shin JC, Kim DY, Lee A, Kim HJ, Kim JH, Choi WJ, Kim HS, Choi KJ Journal of Crystal Growth, 372, 15, 2013 |
4 |
Study of multiple-stacking growth of 1.55 mu m InAs columnar quantum dots with modulated tensile-strained InGaAsP barrier layers Okumura S, Yasuoka N, Kawaguchi K, Tanaka Y, Ekawa M Journal of Crystal Growth, 340(1), 87, 2012 |
5 |
Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence Bolinsson J, Mergenthaler K, Samuelson L, Gustafsson A Journal of Crystal Growth, 315(1), 138, 2011 |
6 |
Fabrication and characterization of AlP-GaP core-shell nanowires Borgstrom MT, Mergenthaler K, Messing ME, Hakanson U, Wallentin J, Samuelson L, Pistol ME Journal of Crystal Growth, 324(1), 290, 2011 |
7 |
Growth of doped InAsyP1-y nanowires with InP shells Wallentin J, Messing ME, Trygg E, Samuelson L, Deppert K, Borgstrom MT Journal of Crystal Growth, 331(1), 8, 2011 |
8 |
Au-catalyst-free epitaxy of InAs nanowires Forbes D, Hubbard S, Raffaelle R, McNatt JS Journal of Crystal Growth, 312(8), 1391, 2010 |
9 |
Formation of Ge-diffusion-suppressed GaAs layers and InAs quantum dots on Ge/Si substrates Kawaguchi K, Ebe H, Ekawa M, Sugama A, Arakawa Y Journal of Crystal Growth, 312(20), 2919, 2010 |
10 |
GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayers Podhorodecki A, Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Serafinczuk J, Strek W Journal of Crystal Growth, 310(5), 940, 2008 |