화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Tuning the permeability spectra with a half-free ferromagnetic underlayer in (NiFe/IrMn)(n) exchange-biased multilayers
Jin LC, Zhang HW, Tang XL, Zhong ZY
Thin Solid Films, 520(17), 5756, 2012
2 Microwave noise modeling of FinFETs
Crupi G, Caddemi A, Schreurs DMMP, Wiatr W, Mercha A
Solid-State Electronics, 56(1), 18, 2011
3 The impact of post gate annealing on noise performance of AlGaN/GaN microwave HEMTs
Liu D, Lee J, Lu W
Solid-State Electronics, 51(1), 90, 2007
4 Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors
Yang H, Wang H, Radhakrishnan K
Thin Solid Films, 515(10), 4514, 2007
5 Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures
Ardaravicius L, Liberis J, Matulionis A, Mel'tser BY, Solov'ev VA, Shubina TV, Ivanov SV, Kop'ev PS
Materials Science Forum, 384-3, 117, 2002
6 0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters
Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP
Solid-State Electronics, 46(3), 379, 2002