화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Expression, purification, crystallization and structure determination of the N terminal domain of Fhb, a factor H binding protein from Streptococcus suis
Zhang CM, Yu Y, Yang MJ, Jiang YQ
Biochemical and Biophysical Research Communications, 466(3), 413, 2015
2 Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Kilchytska V, Alvarado J, Collaert N, Rooyackers R, Put S, Simoen E, Claeys C, Flandre D
Solid-State Electronics, 59(1), 18, 2011
3 Field-induced surface passivation of p-type silicon by using AlON films
Ghosh SN, Parm IO, Dhungel SK, Jang KS, Jeong SW, Yoo J, Hwang SH, Yi J
Renewable Energy, 33(2), 320, 2008
4 Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers HFW, De Wolf S, Beaucarne G
Solar Energy Materials and Solar Cells, 90(18-19), 3438, 2006