| 1 |
Optical characteristics of multiple layered InGaN quantum wells on GaN nanowalls grown on Si (111) substrate
Tamura Y, Hane K
Materials Research Bulletin, 83, 563, 2016 |
| 2 |
Photocatalytic hydrogen production using visible-light-responsive Ta3N5 photocatalyst supported on monodisperse spherical SiO2 particulates
Liu X, Zhao L, Domen K, Takanabe K
Materials Research Bulletin, 49, 58, 2014 |
| 3 |
Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique
Saron KMA, Hashim MR
Materials Chemistry and Physics, 139(2-3), 459, 2013 |
| 4 |
Two step growth of high quality long n-GaN:Si nanowires using mu-GaN seed on Si(111) by metalorganic chemical vapor deposition
Kim MH, Park JH, Yoo HI, Kissinger S, Kim JS, Baek BJ, Lee CR
Thin Solid Films, 548, 58, 2013 |
| 5 |
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas JA, Mastro MA, Imhoff EA, Tadjer MJ, Eddy CR, Kub FJ
Journal of Crystal Growth, 312(18), 2616, 2010 |
| 6 |
Growth of colorless transparent GaN single crystals on prismatic GaN seeds using a Ga melt and Na vapor
Yamada T, Yamane H, Yao YZ, Yokoyama M, Sekiguchi T
Materials Research Bulletin, 44(3), 594, 2009 |
| 7 |
The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet chemical etching
Yu NS, Guo LW, Tang LH, Zhu XL, Wang J, Peng MZ, Yan JF, Jia HQ, Chen H, Zhou JM
Materials Research Bulletin, 42(9), 1589, 2007 |
| 8 |
Effects of ion implantation on the mechanical behavior of GaN films
Kavouras P, Konminou P, Karakostas T
Thin Solid Films, 515(5), 3011, 2007 |
| 9 |
Studies of electron trapping in GaN doped with carbon
Lopatiuk O, Chernyak L, Feldman Y, Gartsman K
Thin Solid Films, 515(10), 4365, 2007 |
| 10 |
Calculations of optical properties in p-doped nitrides quaternary alloys multiple quantum wells
Rodngues SCP, d'Eurydice MN, Sipahi GM, da Silva EF
Thin Solid Films, 515(2), 782, 2006 |
