검색결과 : 142건
No. | Article |
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1 |
Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer Chauhan P, Hasenohrl S, Dobrocka E, Vanco L, Stoklas R, Kovac J, Siffalovic P, Kuzmil J Applied Surface Science, 470, 1, 2019 |
2 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
3 |
MOVPE grown 1.0 eV InGaAsP solar cells with bandgap-voltage offset near to ideal radiative recombination limit Lu HB, Li XY, Zhang W, Li G, Hu SH, Dai N Solar Energy Materials and Solar Cells, 196, 65, 2019 |
4 |
Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride Rice A, Allerman A, Crawford M, Beechem T, Ohta T, Spataru C, Figiel J, Smith M Journal of Crystal Growth, 485, 90, 2018 |
5 |
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions Creighton JR, Coltrin ME, Figiel JJ Journal of Crystal Growth, 464, 132, 2017 |
6 |
Thermodynamic considerations for epitaxial growth of III/alloys Stringfellow GB Journal of Crystal Growth, 468, 11, 2017 |
7 |
Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers Barry OI, Tanaka A, Nagamatsu K, Bae SY, Lekhal K, Matsushita J, Deki M, Nitta S, Honda Y, Amano H Journal of Crystal Growth, 468, 552, 2017 |
8 |
Detection of In segregation in InGaN by using Eu as a probe Takatsu J, Mitchell B, Koizumi A, Yamanaka S, Matsuda M, Gregorkiewicz T, Kojima T, Fujiwara Y Journal of Crystal Growth, 468, 831, 2017 |
9 |
Experimental study of the orientation dependence of indium incorporation in GaInN Bhat R, Guryanov GM Journal of Crystal Growth, 433, 7, 2016 |
10 |
Reply to "Comments on'Experimental study of the orientation dependence of indium incorporation in GaInN'" by Morteza Monavarian Bhat R, Guryanov GM Journal of Crystal Growth, 445, 108, 2016 |