검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus Rao S, Bergamini F, Nipoti R, Saddow SE Applied Surface Science, 252(10), 3837, 2006 |
| 2 |
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature Bergamini F, Moscatelli F, Canino M, Poggi A, Nipoti R Materials Science Forum, 483, 625, 2005 |
| 3 |
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C Bergamini A, Rao SP, Saddow SE, Nipoti R Materials Science Forum, 483, 629, 2005 |
| 4 |
Analysis of the diode characteristics using the thermodynamic theories Maa YJ, Abdel-Motaleb IM Solid-State Electronics, 46(5), 735, 2002 |
| 5 |
Validation of the small-signal model of a forward-biased p-n junction diode Kumar PR, Sharma P, Patil MB Solid-State Electronics, 44(7), 1247, 2000 |