화학공학소재연구정보센터
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No. Article
1 Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes
Le Boulbar ED, Priesol J, Nouf-Allehiani M, Naresh-Kumar G, Fox S, Trager-Cowan C, Satka A, Allsopp DWE, Shields PA
Journal of Crystal Growth, 466, 30, 2017
2 Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy
Sarwar ATMG, Yang F, Esser BD, Kent TF, McComb DW, Myers RC
Journal of Crystal Growth, 443, 90, 2016
3 Controlled coalescence of MOVPE grown AlN during lateral overgrowth
Kueller V, Knauer A, Zeimer U, Kneissl M, Weyers M
Journal of Crystal Growth, 368, 83, 2013
4 Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers
Strittmatter A, Teepe M, Knollenberg C, Johnson NM
Journal of Crystal Growth, 314(1), 1, 2011
5 Growth of AlGaN and AlN on patterned AlN/sapphire templates
Kueller V, Knauer A, Brunner F, Zeimer U, Rodriguez H, Kneissl M, Weyers M
Journal of Crystal Growth, 315(1), 200, 2011
6 GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy
Dogan P, Brandt O, Pfuller C, Bluhm AK, Geelhaar L, Riechert H
Journal of Crystal Growth, 323(1), 418, 2011
7 Lithographically defined carbon growth templates for ELOG of GaN
Burckel DB, Fan HY, Thaler G, Koleske DD
Journal of Crystal Growth, 310(12), 3113, 2008
8 Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
Roskowski AM, Miraglia PQ, Preble EA, Einfeldt S, Davis RF
Journal of Crystal Growth, 241(1-2), 141, 2002
9 Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Preble EA, Rajagopal P, Zorman CA, Mehregany M
Journal of Crystal Growth, 225(2-4), 134, 2001
10 Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Davis RF, Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M
Journal of Crystal Growth, 231(3), 335, 2001