| 1 |
Silicon nano-crystalline structures fabricated by a sequential plasma hydrogenation and annealing technique
Abdi Y, Hashemi P, Erzadeh SM, Jamei M, Robertson MD, Bums MJ, MacLachlan JM
Thin Solid Films, 516(10), 3172, 2008 |
| 2 |
Behaviour of plasma hydrogenated n-type silicon in aqueous fluoride media: comparison with non-hydrogenated silicon
Benhaoua B, Kerbache T, Chari A, Gorochov O
Materials Chemistry and Physics, 84(2-3), 315, 2004 |
| 3 |
Hydrogen incorporation into SiC using plasma-hydrogenation
Koshka Y, Draper WA, Lakshman RY, Scofield J, Saddow SE
Materials Science Forum, 389-3, 569, 2002 |
| 4 |
In flight treatment of metallurgical silicon powder by RF thermal plasma: elaboration of hydrogenated silicon deposit on a substrate
Benmansour M, Francke E, Morvan D, Amouroux J, Ballutaud D
Thin Solid Films, 403-404, 112, 2002 |
| 5 |
A novel technique for increasing electron mobility of indium-tin-oxide transparent conducting films
Keshmiri SH, Rezaee-Roknabadi M, Ashok S
Thin Solid Films, 413(1-2), 167, 2002 |
| 6 |
Enhancement of drift mobility of zinc oxide transparent-conducting films by a hydrogenation process
Keshmiri SH, Rokn-Abadi MR
Thin Solid Films, 382(1-2), 230, 2001 |
| 7 |
Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs)
Farmakis FV, Tsamados DM, Brini J, Kamarinos G, Dimitriadis CA, Miyasaka M
Thin Solid Films, 383(1-2), 151, 2001 |
| 8 |
Effects of Process Temperature on Polysilicon Thin-Film Transistors with Liquid-Phase Deposited Oxides as Gate Insulators
Yeh CF, Chen TJ, Jeng JN
Journal of the Electrochemical Society, 144(10), 3645, 1997 |
