검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Zincblende and wurtzite phases in InN epilayers and their respective band transitions Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C Journal of Crystal Growth, 288(2), 225, 2006 |
| 2 |
Growth of 3C-(Si1-xC1-Y)Gex+y layers on 4H-SiC by molecular beam epitaxy Weih P, Romanus H, Stauden T, Spiess L, Ambacher O, Pezoldt J Materials Science Forum, 483, 173, 2005 |
| 3 |
Pressure effect on the elastic properties of SiC polytypes Davydov SY Materials Science Forum, 483, 303, 2005 |
| 4 |
Study of polytype switching vs. micropipes in PVT grown SiC single crystals Wang S, Sanchez E, Kopec A, Zhang M, Hernandez O Materials Science Forum, 457-460, 51, 2004 |
| 5 |
Tailoring the SiC subsurface stacking by the chemical potential Starke U, Bernhardt J, Schardt J, Seubert A, Heinz K Materials Science Forum, 457-460, 415, 2004 |
| 6 |
Electroluminescence of p-3C-SiC/n-6H-SiC heterodiodes, grown by sublimation epitaxy in vacuum Lebedev AA, Stel'chuk AM, Kuznetsov AN, Savkina NS Materials Science Forum, 457-460, 597, 2004 |
| 7 |
Optical properties of silicon carbide polytypes below and around bandgap Kildemo M Thin Solid Films, 455-56, 187, 2004 |
| 8 |
The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Wang S, Timmerman A Materials Science Forum, 389-3, 71, 2002 |
| 9 |
Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T Materials Science Forum, 389-3, 589, 2002 |
| 10 |
Characterization of bulk and epitaxial SiC material using photoluminescence spectroscopy Henry A, Ellison A, Forsberg U, Magnusson B, Pozina G, Janzen E Materials Science Forum, 389-3, 593, 2002 |