| 1 |
Effect of a novel chelating agent on defect removal during post-CMP cleaning
Hong J, Niu XH, Liu YL, He YG, Zhang BG, Wang J, Han LY, Yan CQ, Zhang J
Applied Surface Science, 378, 239, 2016 |
| 2 |
Mechanisms for nano particle removal in brush scrubber cleaning
Huang YT, Guo D, Lu XC, Luo JB
Applied Surface Science, 257(7), 3055, 2011 |
| 3 |
Particles detection and analysis of hard disk substrate after cleaning of post chemical mechanical polishing
Huang YT, Lu XC, Pan GS, Lee B, Luo JB
Applied Surface Science, 255(22), 9100, 2009 |
| 4 |
Effect of Post-CMP Cleaning On Electrochemical Characteristics of Cu and Ti in Patterned Wafer
Noh KM, Kim EK, Lee YK, Sung YM
Korean Journal of Materials Research, 19(3), 174, 2009 |
| 5 |
Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI) - An electrochemical perspective
Ein-Eli Y, Starosvetsky D
Electrochimica Acta, 52(5), 1825, 2007 |
| 6 |
Modeling of particle removal using non-contact brush scrubbing in post-CMP cleaning processes
Chein R, Liao WY
Journal of Adhesion, 82(6), 555, 2006 |
| 7 |
A modeling approach to describe the adhesion of rough, asymmetric particles to surfaces
Eichenlaub S, Kumar G, Beaudoin S
Journal of Colloid and Interface Science, 299(2), 656, 2006 |
| 8 |
Roughness models for particle adhesion
Eichenlaub S, Gelb A, Beaudoin S
Journal of Colloid and Interface Science, 280(2), 289, 2004 |
| 9 |
Novel post CMP cleaning using buffered HF solution and ozone water
Yeh CF, Hsiao CW, Lee WS
Applied Surface Science, 216(1-4), 46, 2003 |
