| 1 |
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
Ghadi H, Agarwal A, Adhikary S, Agawane J, Mandal A, Chakrabarti S, Pendyala NB, Prajapati S
Thin Solid Films, 566, 1, 2014 |
| 2 |
Investigations for InAs/GaAs multilayered quantum-dot structure treated by high energy proton irradiation
Tang SF, Hsieh HH, Tu HY, You TH, Lin SY, Wang LC, Chiang CD
Thin Solid Films, 518(24), 7425, 2010 |
| 3 |
Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
Huang CY, Ou TM, Chou ST, Tsai CS, Wu MC, Lin SY, Chi JY, Hsu BY, Chi CC
Thin Solid Films, 515(10), 4459, 2007 |
| 4 |
Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD
Hsu MY, Tang SF, Chiang CD, Su CC, Wang LC, Kuo CT
Thin Solid Films, 498(1-2), 183, 2006 |
| 5 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
Peng YH, Chen CC, Kuan CH, Cheng HH
Solid-State Electronics, 47(10), 1775, 2003 |
