검색결과 : 42건
No. | Article |
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1 |
First principles isothermal-isobaric centroid molecular dynamics simulation of high pressure ices Ikeda T Chemical Physics Letters, 717, 141, 2019 |
2 |
Ring-polymer molecular dynamical benchmarks for X + H-2 insertion reactions Wang H, Fang JH, Yang H, Song JN, Li YL Chemical Physics Letters, 730, 227, 2019 |
3 |
Quantum modeling of threshold voltage in Ge dual material gate (DMG) FinFET Saha R, Bhowmick B, Baishya S Solid-State Electronics, 159, 129, 2019 |
4 |
Simulation on hydrogen storage properties of metal-organic frameworks Cu-BTC at 77-298 K Chen SM, Shi YM, Gu B AIChE Journal, 64(4), 1383, 2018 |
5 |
Unravelling the influence of quantum proton delocalization on electronic charge transfer through the hydrogen bond Schran C, Marsalek O, Markland TE Chemical Physics Letters, 678, 289, 2017 |
6 |
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit Al-Ameri T, Georgiev VP, Sadi T, Wang YJ, Adamu-Lema F, Wang XS, Amoroso SM, Towie E, Brown A, Asenov A Solid-State Electronics, 129, 73, 2017 |
7 |
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs Villena MA, Gonzalez MB, Roldan JB, Campabadal F, Jimenez-Molinos F, Gomez-Campos FM, Sune J Solid-State Electronics, 111, 47, 2015 |
8 |
Thickness oscillations of the transport properties in n-type Bi2Te3 topological insulator thin films Rogacheva EI, Budnik AV, Sipatov AY, Nashchekina ON, Fedorov AG, Dresselhaus MS, Tang S Thin Solid Films, 594, 109, 2015 |
9 |
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes Dutta T, Rafhay Q, Clerc R, Lacord J, Monfray S, Pananakakis G, Boeuf F, Ghibaudo G Solid-State Electronics, 88, 43, 2013 |
10 |
Optical characterizations of GaN nanorods fabricated by natural lithography Kim BJ, Bang J, Kim SH, Kim J Korean Journal of Chemical Engineering, 27(2), 693, 2010 |