| 1 |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device
Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG
Solid-State Electronics, 140, 51, 2018 |
| 2 |
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Stegemann B, Gad KM, Balamou P, Sixtensson D, Vossing D, Kasemann M, Angermann H
Applied Surface Science, 395, 78, 2017 |
| 3 |
Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation
Gad KM, Vossing D, Balamou P, Hiller D, Stegemann B, Angermann H, Kasemann M
Applied Surface Science, 353, 1269, 2015 |
| 4 |
Effect of rapid thermal oxidation on structure and photoelectronic properties of silicon oxide in monocrystalline silicon solar cells
Liu CP, Chang MW, Chuang CL
Current Applied Physics, 14(5), 653, 2014 |
| 5 |
Dislocation behavior of surface-oxygen-concentration controlled Si wafers
Asazu H, Takeuchi S, Sannai H, Sudo H, Araki K, Nakamura Y, Izunome K, Sakai A
Thin Solid Films, 557, 106, 2014 |
| 6 |
Preparation of oxidized nano-porous-silicon thin films for ultra-violet optical-sensing applications
Lin ML, Lin YC, Wu KH, Huang CP
Thin Solid Films, 529, 275, 2013 |
| 7 |
Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon
Du WT, Zhang XN, Zhang YJ, Wang WJ, Duan XT
Thin Solid Films, 521, 222, 2012 |
| 8 |
Synthesis of Si nanowires with a thermally oxidized shell and effects of the shell on transistor characteristics
Kawashima T, Saitoh T, Komori K, Fujii M
Thin Solid Films, 517(16), 4520, 2009 |
| 9 |
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers
Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK
Applied Surface Science, 255(5), 2971, 2008 |
| 10 |
저압급속열산화법과 플라즈마확산산화법에 의한 실리콘 산화박막의 제조
고천광, 이원규
Korean Chemical Engineering Research, 46(2), 408, 2008 |
