검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface Chen DB, Wan LJ, Li J, Liu ZK, Li GQ Solid-State Electronics, 151, 60, 2019 |
| 2 |
Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment Li MJ, Wang JY, Wang HY, Cao QR, Liu JQ, Huang CY Solid-State Electronics, 156, 58, 2019 |
| 3 |
Do renters skimp on energy efficiency during economic recessions? Evidence from Northeast Scotland Liu N, Zhao Y, Ge JQ Energy, 165, 164, 2018 |
| 4 |
Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching Son DH, Jo YW, Won CH, Lee JH, Seo JH, Lee SH, Lim JW, Kim JH, Kang IM, Cristoloveanu S, Lee JH Solid-State Electronics, 141, 7, 2018 |
| 5 |
Ti/Al/Ti/TiW Au-free low temperature ohmic contacts for un-doped AlGaN/GaN HEMTs Li QX, Zhou QB, Gao S, Liu XY, Wang H Solid-State Electronics, 147, 1, 2018 |
| 6 |
GEOMETRIC EFFECT ON SPRAY CHARACTERISTICS OF GAS-CENTERED SWIRL COAXIAL INJECTORS: RECESS RATIO AND GAP THICKNESS Park G, Lee J, Lee I, Yoon Y, Sohn CH Atomization and Sprays, 27(7), 579, 2017 |
| 7 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T Solid-State Electronics, 137, 1, 2017 |
| 8 |
The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors Do JW, Jung HW, Shin MJ, Ahn HK, Kim H, Kim RH, Cho KJ, Chang SJ, Min BG, Yoon HS, Kim JH, Yang JM, Lee JH, Lim JW Thin Solid Films, 628, 31, 2017 |
| 9 |
EFFECT OF RECESS LENGTH ON THE SPRAY CHARACTERISTICS OF LIQUID-CENTERED SWIRL COAXIAL INJECTORS Li QL, Kang ZT, Zhang XQ, Cheng P Atomization and Sprays, 26(6), 535, 2016 |
| 10 |
Bulk FinFETs with body spacers for improving fin height variation Wei X, Zhu HL, Zhang YB, Zhao C Solid-State Electronics, 122, 45, 2016 |