검색결과 : 10건
No. | Article |
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1 |
Si(111) step fluctuations in reflection electron microscopy at 1100 degrees C: anomalous step-step repulsion Schroll RD, Cohen SD, Einstein TL, Metois JJ, Gebremariam H, Richards HL, Williams ED Applied Surface Science, 212, 219, 2003 |
2 |
In situ transmission and reflection electron microscopy studies of palladium silicide islands grown on silicon (111) surface Takeguchi M, Liu J, Zhang Q, Tanaka M, Yasuda H, Furuya K Journal of Crystal Growth, 237, 388, 2002 |
3 |
UHV-REM study of gold adsorption on the Si(111) surface Latyshev AV, Nasimov DA, Savenko VN, Aseev AL Thin Solid Films, 367(1-2), 142, 2000 |
4 |
Nanometer-scale Si-selective epitaxial growth using an ultrathin SiO2 mask Miyata N, Watanabe H, Ichikawa M Journal of Vacuum Science & Technology B, 17(3), 978, 1999 |
5 |
Atom Technology Project: Recent activities Tanaka K Journal of Vacuum Science & Technology B, 16(6), 3127, 1998 |
6 |
Layer-by-layer sputtering of Si(111) and (001) surfaces mediated by surface vacancy diffusion : Surface physics and application for nanofabrication Watanabe H, Ichikawa M Journal of Vacuum Science & Technology B, 15(6), 2666, 1997 |
7 |
Relaxation of the Step Profile for Different Microscopic Mechanisms Liu DJ, Fu ES, Johnson MD, Weeks JD, Williams ED Journal of Vacuum Science & Technology B, 14(4), 2799, 1996 |
8 |
Oscillatory Kinetics in Heterogeneous Catalysis Imbihl R, Ertl G Chemical Reviews, 95(3), 697, 1995 |
9 |
Scanning-Tunneling-Microscopy on Quenched Si(111) Surfaces Teufel L, Heuell P, Kulakov MA, Bullemer B Thin Solid Films, 264(2), 236, 1995 |
10 |
Gas-Phase Etching of Si(111)-(7X7) Surfaces by Oxygen Observed by Scanning-Tunneling-Microscopy Donig F, Feltz A, Kulakov M, Hessel HE, Memmert U, Behm RJ Journal of Vacuum Science & Technology B, 11(6), 1955, 1993 |