화학공학소재연구정보센터
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No. Article
1 Si(111) step fluctuations in reflection electron microscopy at 1100 degrees C: anomalous step-step repulsion
Schroll RD, Cohen SD, Einstein TL, Metois JJ, Gebremariam H, Richards HL, Williams ED
Applied Surface Science, 212, 219, 2003
2 In situ transmission and reflection electron microscopy studies of palladium silicide islands grown on silicon (111) surface
Takeguchi M, Liu J, Zhang Q, Tanaka M, Yasuda H, Furuya K
Journal of Crystal Growth, 237, 388, 2002
3 UHV-REM study of gold adsorption on the Si(111) surface
Latyshev AV, Nasimov DA, Savenko VN, Aseev AL
Thin Solid Films, 367(1-2), 142, 2000
4 Nanometer-scale Si-selective epitaxial growth using an ultrathin SiO2 mask
Miyata N, Watanabe H, Ichikawa M
Journal of Vacuum Science & Technology B, 17(3), 978, 1999
5 Atom Technology Project: Recent activities
Tanaka K
Journal of Vacuum Science & Technology B, 16(6), 3127, 1998
6 Layer-by-layer sputtering of Si(111) and (001) surfaces mediated by surface vacancy diffusion : Surface physics and application for nanofabrication
Watanabe H, Ichikawa M
Journal of Vacuum Science & Technology B, 15(6), 2666, 1997
7 Relaxation of the Step Profile for Different Microscopic Mechanisms
Liu DJ, Fu ES, Johnson MD, Weeks JD, Williams ED
Journal of Vacuum Science & Technology B, 14(4), 2799, 1996
8 Oscillatory Kinetics in Heterogeneous Catalysis
Imbihl R, Ertl G
Chemical Reviews, 95(3), 697, 1995
9 Scanning-Tunneling-Microscopy on Quenched Si(111) Surfaces
Teufel L, Heuell P, Kulakov MA, Bullemer B
Thin Solid Films, 264(2), 236, 1995
10 Gas-Phase Etching of Si(111)-(7X7) Surfaces by Oxygen Observed by Scanning-Tunneling-Microscopy
Donig F, Feltz A, Kulakov M, Hessel HE, Memmert U, Behm RJ
Journal of Vacuum Science & Technology B, 11(6), 1955, 1993