| 1 |
Influence of crystal orientation and surface termination on the growth of BiSb thin films on GaAs substrates
Yao K, Khang NHD, Hai PN
Journal of Crystal Growth, 511, 99, 2019 |
| 2 |
Fe delta-doped (In,Fe)Sb ferromagnetic semiconductor thin films for magnetic-field sensors with ultrahigh Hall sensitivity
Nishijima K, Tu NT, Tanaka M, Hai PN
Journal of Crystal Growth, 511, 127, 2019 |
| 3 |
Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy
Wu YZ, Bin L, Li ZH, Tao T, Xie ZL, Xiu XQ, Chen P, Chen DJ, Lu H, Shi Y, Zhang R, Zheng YD
Journal of Crystal Growth, 506, 30, 2019 |
| 4 |
In situ determination of the growth conditions of GaSbBi alloys
Delorme O, Cerutti L, Tournie E, Rodriguez JB
Journal of Crystal Growth, 495, 9, 2018 |
| 5 |
Reconstruction phase transition c(4 x 4) - (1 x 3) on the (001)InSb surface
Bakarov A, Galitsyn Y, Mansurov V, Zhuravlev K
Journal of Crystal Growth, 457, 207, 2017 |
| 6 |
A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface
Bomphrey JJ, Ashwin MJ, Jones TS
Journal of Crystal Growth, 459, 118, 2017 |
| 7 |
Influence of the Ge diffusion on the magnetic and structural properties in Fe3Si and CoFe epilayers grown on Ge
Ikawa M, Kawano M, Sakai S, Yamada S, Kanashima T, Hamaya K
Journal of Crystal Growth, 468, 676, 2017 |
| 8 |
Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions
Ahmed AS, Esser BD, Rowland J, McComb DW, Kawakami RK
Journal of Crystal Growth, 467, 38, 2017 |
| 9 |
AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range
Tamariz S, Martin D, Grandjean N
Journal of Crystal Growth, 476, 58, 2017 |
| 10 |
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces
Kawaharazuka A, Horikoshi Y
Journal of Crystal Growth, 477, 25, 2017 |
