검색결과 : 67건
| No. | Article |
|---|---|
| 1 |
Fe delta-doped (In,Fe)Sb ferromagnetic semiconductor thin films for magnetic-field sensors with ultrahigh Hall sensitivity Nishijima K, Tu NT, Tanaka M, Hai PN Journal of Crystal Growth, 511, 127, 2019 |
| 2 |
In situ determination of the growth conditions of GaSbBi alloys Delorme O, Cerutti L, Tournie E, Rodriguez JB Journal of Crystal Growth, 495, 9, 2018 |
| 3 |
A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface Bomphrey JJ, Ashwin MJ, Jones TS Journal of Crystal Growth, 459, 118, 2017 |
| 4 |
The role of titanium at the SrTiO3/GaAs epitaxial interface Meunier B, Bachelet R, Grenet G, Botella C, Regreny P, Largeau L, Penuelas J, Saint-Girons G Journal of Crystal Growth, 433, 139, 2016 |
| 5 |
Influence of annealing condition and multicycle AlGaAs/GaAs structures on the Al0.26Ga0.74As surface morphology Wei WZ, Wang Y, Guo X, Luo ZJ, Zhao Z, Zhou HY, Ding Z Applied Surface Science, 345, 400, 2015 |
| 6 |
High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy Huo WX, Shi JA, Mei ZX, Liu LS, Li JQ, Gu L, Du XL, Xue QK Journal of Crystal Growth, 420, 32, 2015 |
| 7 |
AlxIn1-xAsySb1-y alloys lattice matched to InAs(100) grown by molecular beam epitaxy Rojas-Ramirez JS, Wang S, Contreras-Guerrero R, Caro M, Bhatnagar K, Holland M, Oxland R, Doornbos G, Passlack M, Diaz CH, Droopad R Journal of Crystal Growth, 425, 33, 2015 |
| 8 |
Plasma assisted molecular beam epitaxy of GaN with growth retes > 2.6 mu m/h McSkimming BM, Wu F, Huault T, Chaix C, Speck JS Journal of Crystal Growth, 386, 168, 2014 |
| 9 |
Calculations of parameters of RHEED oscillations using different models of the scattering potential Mitura Z Journal of Crystal Growth, 401, 364, 2014 |
| 10 |
Influence of GaAs(001) pregrowth surface morphology and reconstruction on the growth of InGaAs layers Zhou Q, Luo ZJ, Liu K, Guo X, Zhang BC, Zhou X, Wang JH, Ding Z Applied Surface Science, 268, 151, 2013 |