| 1 |
Electric-field dependence of electron drift velocity in 4H-SiC
Ivanov PA, Potapov AS, Samsonova TP, Grekhov IV
Solid-State Electronics, 123, 15, 2016 |
| 2 |
A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement
Rahimian M, Orouji AA, Aminbeidokhti A
Current Applied Physics, 13(4), 779, 2013 |
| 3 |
"Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction
Diouf C, Cros A, Monfray S, Mitard J, Rosa J, Gloria D, Ghibaudo G
Solid-State Electronics, 85, 12, 2013 |
| 4 |
Device model for poly(o-methoxyaniline) field-effect transistor
Bianchi RF, Onmori RK, Faria RM
Journal of Polymer Science Part B: Polymer Physics, 43(1), 74, 2005 |
| 5 |
Influence of carrier velocity related parameters on the propagation delay time of inverters with high-k gate dielectric CMISFETs
Ono M, Nishiyama A
Solid-State Electronics, 49(2), 155, 2005 |
| 6 |
Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches
Hsin YM, Tang WB, Hsu HT
Solid-State Electronics, 49(3), 295, 2005 |
