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| No. | Article |
|---|---|
| 1 |
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer Godlewski M, Goldys EM, Phillips MR, Pakula K, Baranowski JM Applied Surface Science, 177(1-2), 22, 2001 |