검색결과 : 4건
No. | Article |
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1 |
Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE Lekhal K, Bae SY, Lee HJ, Mitsunari T, Tamura A, Deki M, Honda Y, Amano H Journal of Crystal Growth, 447, 55, 2016 |
2 |
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique Kambayashi H, Satoh Y, Kokawa T, Ikeda N, Nomura T, Kato S Solid-State Electronics, 56(1), 163, 2011 |
3 |
Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser Cheng YB, Pan JQ, Liang S, Feng W, Liao ZY, Zhou F, Wang BJ, Zhao LJ, Zhu HL, Wang W Journal of Crystal Growth, 308(2), 297, 2007 |
4 |
Performance comparison between integrated 40 Gb/s EAM devices grown by selective area growth and butt-joint overgrowth Zhu JT, Billia L, Bour D, Corzine S, Hofler G Journal of Crystal Growth, 272(1-4), 576, 2004 |