화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE
Lekhal K, Bae SY, Lee HJ, Mitsunari T, Tamura A, Deki M, Honda Y, Amano H
Journal of Crystal Growth, 447, 55, 2016
2 High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique
Kambayashi H, Satoh Y, Kokawa T, Ikeda N, Nomura T, Kato S
Solid-State Electronics, 56(1), 163, 2011
3 Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser
Cheng YB, Pan JQ, Liang S, Feng W, Liao ZY, Zhou F, Wang BJ, Zhao LJ, Zhu HL, Wang W
Journal of Crystal Growth, 308(2), 297, 2007
4 Performance comparison between integrated 40 Gb/s EAM devices grown by selective area growth and butt-joint overgrowth
Zhu JT, Billia L, Bour D, Corzine S, Hofler G
Journal of Crystal Growth, 272(1-4), 576, 2004