검색결과 : 40건
No. | Article |
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1 |
Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template Kuo CH, Chang LC, Chou HM Journal of the Electrochemical Society, 158(10), H961, 2011 |
2 |
Effect of InN Interlayer in Growth of GaN on Si Substrates Kim KW, Kim DS, Lee JH, Lee JH, Hahn CK Electrochemical and Solid State Letters, 13(3), H66, 2010 |
3 |
Heteroepitaxial Growth and Faceting of Ge Nanowires on Si(111) by Electron-Beam Evaporation Pecora EF, Irrera A, Artoni P, Boninelli S, Bongiorno C, Spinella C, Priolo F Electrochemical and Solid State Letters, 13(5), K53, 2010 |
4 |
Extended-Defect Aspects of Ge-on-Si Materials and Devices Simoen E, Eneman G, Wang G, Souriau L, Loo R, Caymax M, Claeys C Journal of the Electrochemical Society, 157(2), R1, 2010 |
5 |
Effect of Threading Dislocations on Local Contacts in Epitaxial ZnO Films Lin CY, Liu WR, Chang CS, Hsu CH, Hsieh WF, Chien FSS Journal of the Electrochemical Society, 157(3), H268, 2010 |
6 |
Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition Lin HC, Liu HH, Lee GY, Chyi JI, Lu CM, Chao CW, Wang TC, Chang CJ, Chi SWS Journal of the Electrochemical Society, 157(3), H304, 2010 |
7 |
Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D'Arrigo G Journal of the Electrochemical Society, 157(4), H438, 2010 |
8 |
Theoretical Considerations on Current Spreading in GaN-Based Light Emitting Diodes Fabricated with Top-Emission Geometry Kim H, Lee SN Journal of the Electrochemical Society, 157(5), H562, 2010 |
9 |
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire Wei TB, Hu Q, Duan RF, Wei XC, Yang JK, Wang JX, Zeng YP, Wang GH, Li JM Journal of the Electrochemical Society, 157(7), H721, 2010 |
10 |
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE Wong YY, Chang EY, Yang TH, Chang JR, Ku JT, Hudait MK, Chou WC, Chen M, Lin KL Journal of the Electrochemical Society, 157(7), H746, 2010 |