화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers
Mikhelashvili V, Meyler B, Yofis S, Salzman J, Garbrecht M, Cohen-Hyams T, Kaplan WD, Eisenstein G
Journal of the Electrochemical Society, 157(4), H463, 2010
2 Device characteristics of HfON charge-trap layer nonvolatile memory
Lee T, Banerjee SK
Journal of Vacuum Science & Technology B, 28(5), 1005, 2010
3 Study of machine to machine overlay error for sub-60-nm memory devices
Shin J, Lee S, Yeo J, Kim H, Lee J, Han W
Journal of Vacuum Science & Technology B, 26(6), 2337, 2008