| 1 |
Nanocrystalline SiC films prepared by direct deposition of carbon and silicon ions
Semenov AV, Puzikov VM, Dobrotvorskaya MV, Fedorov AG, Lopin AV
Thin Solid Films, 516(10), 2899, 2008 |
| 2 |
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
Hu ZH, Liao XB, Diao HW, Kong GL, Zeng XB, Xu YY
Journal of Crystal Growth, 264(1-3), 7, 2004 |
| 3 |
Preparation of B-doped a-Si1-xCx : H films and heterojunction p-i-n solar cells by the Cat-CVD method
Chikusa K, Takemoto K, Itoh T, Yoshida N, Nonomura S
Thin Solid Films, 430(1-2), 245, 2003 |
| 4 |
Closed-chamber CVD - a new method for preparation of group-IV thin films for large area electronics
Koynov S, Tzolov M, Brogueira P, Schwarz R
Thin Solid Films, 383(1-2), 206, 2001 |
| 5 |
Deposition of a-SiC : H thin film from organosilicon material by remote plasma CVD method
Xu YY, Muramatsu T, Taniyama M, Aoki T, Hatanaka Y
Thin Solid Films, 368(2), 181, 2000 |
| 6 |
Micro/nanomechanical characterization of ceramic films for microdevices
Li XD, Bhushan B
Thin Solid Films, 340(1-2), 210, 1999 |
| 7 |
Reactivity of alkylsilanes and alkylcarbosilanes in atomic hydrogen-induced chemical vapor deposition
Wrobel AM, Walkiewicz-Pietrzykowska A, Stasiak M, Aoki T, Hatanaka Y, Szumilewicz J
Journal of the Electrochemical Society, 145(3), 1060, 1998 |
| 8 |
Growth-Mechanism of 3C-SiC(111) Films on Si Using Tetramethylsilane by Rapid Thermal Chemical-Vapor-Deposition
Seo YH, Nahm KS, Suh EK, Lee HJ, Hwang YG
Journal of Vacuum Science & Technology A, 15(4), 2226, 1997 |
| 9 |
Structural dependence of mechanical properties of Si incorporated diamond-like carbon films deposited by RF plasma-assisted chemical vapour deposition
Lee KR, Kim MG, Cho SJ, Eun KY, Seong TY
Thin Solid Films, 308-309, 263, 1997 |
| 10 |
Deposition of Fluorinated A-SiC-H Films at Room-Temperature
Kim DS, Lee YH
Journal of the Electrochemical Society, 141(12), 3562, 1994 |
