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Autonomous Oscillations and Pattern Formation with Zero External Resistance during Silicon Electrodissolution Patzauer M, Hueck R, Tosolini A, Schonleber K, Krischer K Electrochimica Acta, 246, 315, 2017 |
2 |
Light-activated electrochemistry on alkyne-terminated Si(100) surfaces towards solution-based redox probes Wu YF, Kashi MB, Yang Y, Goncales VR, Ciampi S, Tilley RD, Gooding JJ Electrochimica Acta, 213, 540, 2016 |
3 |
A comparison of modeling frameworks for the oscillatory silicon electrodissolution Schonleber K, Patzauer M, Krischer K Electrochimica Acta, 210, 346, 2016 |
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The influence of carrier density and doping type on lithium insertion and extraction processes at silicon surfaces McSweeney W, Lotty O, Glynn C, Geaney H, Holmes JD, O'Dwyer C Electrochimica Acta, 135, 356, 2014 |
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Theoretical modelling of the I-V characteristics of p-type silicon in fluoride electrolyte in the first electropolishing plateau Cheggou R, Kadoun A, Gabouze N, Ozanam F, Chazalviel JN Electrochimica Acta, 54(11), 3053, 2009 |
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Influence of chemical additives on the surface reactivity of Si in KOH solution Philipsen HGG, Kelly JJ Electrochimica Acta, 54(13), 3526, 2009 |
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Semiconducting photocathodes for the reduction of dioxygen Part I. Characterisation of crystalline and amorphous p-Si Abdel-Samad HS, Amin MA, Chazalviel JN, Ozanam F, Allongue P Electrochimica Acta, 49(26), 4577, 2004 |
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Etching of n-type silicon in (HF plus oxidant) solutions: in situ characterisation of surface chemistry Safi M, Chazalviel JN, Cherkaoui M, Belaidi A, Gorochov O Electrochimica Acta, 47(16), 2573, 2002 |
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Variation of Layer Spacing in Self-Assembled Hafnium-1,10-Decanediylbis(Phosphonate) Multilayers as Determined by Ellipsometry and Grazing Angle X-Ray-Diffraction Zeppenfeld AC, Fiddler SL, Ham WK, Klopfenstein BJ, Page CJ Journal of the American Chemical Society, 116(20), 9158, 1994 |