검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Impact of CO generation during the melting process on carbon concentration in Czochralski silicon Nagai Y, Tsubota H, Matsumura H Journal of Crystal Growth, 518, 95, 2019 |
| 2 |
Relating wetting and reduction processes in the Si-liquid/SiO2-solid interface Alphei LD, Grotjahn R, Dobbe C, Douvidzon M, Janhsen R, Gebensleben T, Alznauer T, Becker V, Becker JA Journal of Crystal Growth, 419, 165, 2015 |
| 3 |
Effect of pool rotation on flow pattern transition of silicon melt thermocapillary flow in a slowly rotating shallow annular pool Li YR, Xiao L, Wu SY, Imaishi N International Journal of Heat and Mass Transfer, 51(7-8), 1810, 2008 |
| 4 |
Three-dimensional thermocapillary-buoyancy flow in a shallow molten silicon pool with Cz configuration Li YR, Quan XJ, Peng L, Imaishi N, Wu SY, Zeng DL International Journal of Heat and Mass Transfer, 48(10), 1952, 2005 |
| 5 |
Dependence of Si melt flow in a crucible on surface tension variation in the Czochralski process Nakanishi H, Watanabe M, Terashima K Journal of Crystal Growth, 236(4), 523, 2002 |
| 6 |
Asymmetric Distribution of Oxygen Concentration in the Si Melt of a Czochralski System Yi KW, Kakimoto K, Niu ZG, Eguchi M, Noguchi H, Nakamura S, Mukai K Journal of the Electrochemical Society, 143(2), 722, 1996 |