화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication
Lee WCT, Bishop N, Thompson DL, Xue K, Scappucci G, Cederberg JG, Gray JK, Han SM, Celler GK, Carroll MS, Simmons MY
Applied Surface Science, 265, 833, 2013
2 Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4
Suryana R, Ichimiya A, Nakahara H, Saito Y
Journal of Crystal Growth, 301, 349, 2007
3 Effect of WC particle size on grain growth inhibition in the WC-xVC-Co system
Jung SW, Kim SH, Park SY, Kang SJL
Materials Science Forum, 439, 115, 2003
4 Investigation of growth modes of cadmium mercury thiocyanate crystal by atomic force microscopy
Jiang XN, Sun DL, Xu D, Yuan DR, Lu MK, Guo SY, Fang Q
Journal of Crystal Growth, 233(1-2), 196, 2001
5 Formation of small straight steps among large rough steps on the {110} face of cadmium mercury thiocyanate crystal
Jiang XN, Xu D, Sun DL, Yuan DR, Lu MK, Zhang GH, Fang Q
Journal of Crystal Growth, 233(1-2), 318, 2001
6 A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation
Vladimirova M, Pimpinelli A, Videcoq A
Journal of Crystal Growth, 220(4), 631, 2000
7 Amination of 2-Methylpropene over Proton-Exchanged ZSM-5 Zeolite Catalysts
Mizuno N, Tabata M, Uematsu T, Iwamoto M
Journal of Catalysis, 146(1), 249, 1994