화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Variation of the morphology of strained AlGaInAs quantum wells with substrate orientation
Caneau C, Bhat R, Nishiyama N
Journal of Crystal Growth, 310(7-9), 2345, 2008
2 Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy
Chandvankar SS, Shah AP, Bhattacharya A, Chandrasekaran KS, Arora BM
Journal of Crystal Growth, 260(3-4), 348, 2004
3 Defects, Surface Roughening, and Anisotropy on the Tensile InxGa1-xAs/InP(001) System
Dieguez A, Vila A, Cornet A, Clark SA, Westwood DI, Morante JR
Journal of Vacuum Science & Technology B, 15(3), 687, 1997
4 Transmission Electron-Microscopy Study of In0.25Ga0.75As Epilayers Grown on GaAs(001) by Molecular-Beam Epitaxy - The Effect of Epilayer Thickness
Edirisinghe SP, Statonbevan A, Fawcett PN, Joyce BA
Journal of Vacuum Science & Technology B, 13(3), 967, 1995