검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers Schuh P, Scholer M, Wilhelm M, Syvajarvi M, Litrico G, La Via F, Mauceri M, Wellmann PJ Journal of Crystal Growth, 478, 159, 2017 |
| 2 |
Determination of the thickness distribution of a graphene layer grown on a 2'' SiC wafer by means of Auger electron spectroscopy depth profiling Gurban S, Pecz B, Menyhard M, Yakimova R Applied Surface Science, 316, 301, 2014 |
| 3 |
On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0) Bishop SM, Reynolds CL, Molstad JC, Stevie FA, Barnhardt DE, Davis RF Applied Surface Science, 255(13-14), 6535, 2009 |
| 4 |
Sublimation growth of AlN crystals: Growth mode and structure evolution Yakimova R, Kakanakova-Georgieva A, Yazdi GR, Gueorguiev GK, Syvajarvi M Journal of Crystal Growth, 281(1), 81, 2005 |
| 5 |
Homoepitaxial growth on 4H-SiC (03(3)over-bar-8) face by sublimation close space technique Yoneda S, Furusho T, Takagi H, Ohta S, Nishino S Materials Science Forum, 483, 129, 2005 |
| 6 |
Investigation of the SiC transistor and diode nuclear detectors at 8 MeV proton irradiation Strokan NB, Ivanov AM, Savkina NS, Lebedev AA, Kozlovski VV, Syvajarvi M, Yakimova R Materials Science Forum, 483, 1025, 2005 |
| 7 |
Sublimation epitaxy of AlN on SiC: growth morphology and structural features Kakanakova-Georgieva A, Persson POA, Yakimova R, Hultman L, Janzen E Journal of Crystal Growth, 273(1-2), 161, 2004 |
| 8 |
Growth of device quality 4H-SiC by high velocity epitaxy Yakimova R, Syvajarvi M, Ciechonski RR, Wahab Q Materials Science Forum, 457-460, 201, 2004 |
| 9 |
Simple model for calculation of SiC epitaxial layers growth rate in vacuum. Davydov SY, Savkina NS, Lebedev AA, Syvajarvi M, Yakimova R Materials Science Forum, 457-460, 249, 2004 |
| 10 |
Crystal growth of 6H-SIC(01-14) on 3C-SiC(001) substrate by sublimation epitaxy Takagi H, Nishiguchi T, Ohta S, Furusho T, Ohshima S, Nishino S Materials Science Forum, 457-460, 289, 2004 |