| 1 |
Characteristics of amorphous transparent InGaZn6O9 electrodes prepared by RF-magnetron sputtering for fully transparent thin film transistors
Shin HJ, Kim HR, Lee D
Molecular Crystals and Liquid Crystals, 705(1), 48, 2020 |
| 2 |
Thermal Annealing Effects on the Characteristics of Transparent Semiconducting Zn2SnO4 Thin Films Prepared by RF-Magnetron Sputtering with Powder Target
Lee GJ, Lee DK, Sohn SH
Molecular Crystals and Liquid Crystals, 586(1), 179, 2013 |
| 3 |
Electrical property relaxation characteristics of UV-treated ZnO-based thin film transistors
Jin SM, Cho NI, Yun EJ, Nam HG
Thin Solid Films, 527, 334, 2013 |
| 4 |
Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications
Gieraltowska S, Wachnicki L, Witkowski BS, Godlewski M, Guziewicz E
Thin Solid Films, 520(14), 4694, 2012 |
| 5 |
Fabrication of Transparent Semiconducting Indium Zinc Tin Oxide Thin Films and Its Wet Chemical Etching Characteristics in Hydrochloric Acid
Lee KY, Shin HJ, Han DC, Son S, Kim SW, Lee YS, Lee DK
Molecular Crystals and Liquid Crystals, 532, 557, 2010 |
| 6 |
Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor
Cheong WS, Yoon YS, Shin JH, Hwang CS, Chu HY
Thin Solid Films, 517(14), 4094, 2009 |
| 7 |
Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors
Cho YJ, Shin JH, Bobade SM, Kim YB, Choi DK
Thin Solid Films, 517(14), 4115, 2009 |
| 8 |
Transparent electronics: Schottky barrier and heterojunction considerations
Wager JF
Thin Solid Films, 516(8), 1755, 2008 |
| 9 |
Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor
Mine T, Yanagi H, Nomura K, Kamiya T, Hirano M, Hosono H
Thin Solid Films, 516(17), 5790, 2008 |
