검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J Thin Solid Films, 604, 23, 2016 |
| 2 |
Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J Current Applied Physics, 14, S123, 2014 |
| 3 |
Gold nanocluster distribution on faceted and kinked Si nanowires Boukhicha R, Vincent L, Renard C, Gardes C, Yam V, Fossard F, Patriarche G, Jabeen F, Bouchier D Thin Solid Films, 520(8), 3304, 2012 |
| 4 |
Enhancing epitaxial SixC1-x deposition by adding Ge Ostermay I, Kammler T, Bartha JW, Kucher P Thin Solid Films, 518(10), 2834, 2010 |
| 5 |
Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition Calmes C, Bouchier D, Debarre D, Le Thanh V, Clerc C Thin Solid Films, 428(1-2), 150, 2003 |
| 6 |
Alternatives to thick MBE-grown relaxed SiGe buffers Hackbarth T, Herzog HJ, Zeuner M, Hock G, Fitzgerald BA, Bulsara M, Rosenblad C, von Kanel H Thin Solid Films, 369(1-2), 148, 2000 |
| 7 |
A novel doping technology for ultra-shallow junction fabrication: boron diffusion from boron-adsorbed layer by rapid thermal annealing Kim KS, Song YH, Park KT, Kurino H, Matsuura T, Hane K, Koyanagi M Thin Solid Films, 369(1-2), 207, 2000 |
| 8 |
Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs Tezuka T, Kurobe A, Sugiyama N, Takagi S Thin Solid Films, 369(1-2), 338, 2000 |
| 9 |
Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs Oda K, Ohue E, Tanabe M, Shimamoto H, Washio K Thin Solid Films, 369(1-2), 358, 2000 |
| 10 |
Strained Si1-xGex graded channel PMOSFET grown by UHVCVD Su CY, Wu SL, Chang SJ, Chen LP Thin Solid Films, 369(1-2), 371, 2000 |