화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
Zhou L, Gao X, Xu LY, Qiao ZL, Bo BX
Solid-State Electronics, 89, 81, 2013
2 Enhanced control over selective-area intermixing of In0.15Ga0.85As/GaAs quantum dots through post-growth exposure to radio-frequency plasma
Bickel N, LikamWa P
Thin Solid Films, 519(6), 1955, 2011
3 Oxygen nonstoichiometry and high-temperature transport in SrFe1-xWxO3-delta
Markov AA, Patrakeev MV, Savinskaya OA, Nemudry AP, Leonidov IA, Leonidova ON, Kozhevnikov VL
Solid State Ionics, 179(1-6), 99, 2008
4 Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
Chia CK, Chua SJ, Wang YJ, Yong AM, Chow SY
Thin Solid Films, 515(7-8), 3927, 2007