화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE
Mereuta A, Sirbu A, Caliman A, Suruceanu G, Iakovlev V, Mickvic Z, Kapon E
Journal of Crystal Growth, 414, 210, 2015
2 1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions
Mereuta A, Iakovlev V, Caliman A, Mutter L, Sirbu A, Kapon E
Journal of Crystal Growth, 310(23), 5178, 2008
3 MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section
Blokhin SA, Karachinsky LY, Novikov II, Kuznetsov SM, Gordeev NY, Shernyakov YM, Savelyev AV, Maximov MV, Mutig A, Hopfer F, Kovsh AR, Mikhri SS, Krestnikov IL, Livshits DA, Ustinov VM, Shchukin VA, Ledentsov NN, Bimberg D
Journal of Crystal Growth, 301, 945, 2007
4 Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers
Pickrell GW, Louderback DA, Fish MA, Hindi JJ, Lin HC, Simpson MC, Guilfoyle PS, Lear KL
Journal of Crystal Growth, 280(1-2), 54, 2005
5 MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
Kuo HC, Yao HH, Chang YH, Chang YA, Tsai MY, Hsieh J, Chang EY, Wang SC
Journal of Crystal Growth, 272(1-4), 538, 2004
6 MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)
Zorn M, Knigge A, Zeimer U, Klein A, Kissel H, Weyers M, Trankle G
Journal of Crystal Growth, 248, 186, 2003
7 Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures
Wojcik A, Ochalski TJ, Muszalski J, Kowalczyk E, Goszczynski K, Bugajski M
Thin Solid Films, 412(1-2), 114, 2002