| 1 |
High via resistance induced by ionized metal plasma vapor deposition of titanium liner film
Niu CY, Wang FC, Magsamen G, Le B, Stephenson B
Thin Solid Films, 516(8), 1826, 2008 |
| 2 |
Inter-metal inorganic spin-on-glass dielectric layer in 100 nm generation technology
Da Cheng M, Luoh T, Su CT, Yang TH, Chen KC, Lu CY
Thin Solid Films, 516(23), 8726, 2008 |
| 3 |
Mechanism of via failure in copper/organosilicate glass interconnects induced by oxidation
Min WS, Kim DJ, Pyo SG, Park SJ, Choi JT, Kim S
Thin Solid Films, 515(7-8), 3875, 2007 |
| 4 |
Front- and back-end process characterization by SIMS to achieve electrically matched devices
Budri T, Kouzminov D
Applied Surface Science, 231-2, 772, 2004 |
| 5 |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
Cheng YL, Wang YL, Liu CP, Wu YL, Lo KY, Liu CW, Lan JK, Ay C, Feng MS
Materials Chemistry and Physics, 83(1), 150, 2004 |
| 6 |
Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
Cheng YL, Wang YL, Liu CW, Wu YL, Lo KY, Liu CP, Lan JK
Thin Solid Films, 398-399, 533, 2001 |
| 7 |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
Lan JK, Wang YL, Wu YL, Liou HC, Wang JK, Chiu SY, Cheng YL, Feng MS
Thin Solid Films, 377-378, 776, 2000 |
