검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Modeling the Early Stages of Oxygen Agglomeration Kissinger G, Dabrowski J, Kot D, Akhmetov V, Sattler A, von Ammon W Journal of the Electrochemical Society, 158(4), H343, 2011 |
| 2 |
Analytical modeling of the interaction of vacancies and oxygen for oxide precipitation in RTA treated silicon wafers Kissinger G, Dabrowski J, Sattler A, Seuring C, Muller T, Richter H, von Ammon W Journal of the Electrochemical Society, 154(6), H454, 2007 |
| 3 |
A systems-based approach for generating quantitative models of microstructural evolution in silicon materials processing Frewen TA, Sinno T, Haeckl W, von Ammon W Computers & Chemical Engineering, 29(4), 713, 2005 |
| 4 |
A microscopically accurate continuum model for void formation during semiconductor silicon processing Frewen TA, Kapur SS, Haeckl W, von Ammon W, Sinno T Journal of Crystal Growth, 279(3-4), 258, 2005 |
| 5 |
Numerical 3D modelling of turbulent melt flow in large CZ system with horizontal DC magnetic field-I: flow structure analysis Krauze A, Muiznieks A, Mulbauer A, Wetzel T, von Ammon W Journal of Crystal Growth, 262(1-4), 157, 2004 |
| 6 |
Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth Lukanin DP, Kalaev VV, Makarov YN, Wetzel T, Virbulis J, von Ammon W Journal of Crystal Growth, 266(1-3), 20, 2004 |
| 7 |
Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth Wetzel T, Virbulis J, Muiznieks A, von Ammon W, Tomzig E, Raming G, Weber M Journal of Crystal Growth, 266(1-3), 34, 2004 |
| 8 |
Analysis of magnetic field effect on 3D melt flow in CZ Si growth Ivanov NG, Korsakov AB, Smirnov EM, Khodosevitch KV, Kalaev VV, Makarov YN, Dornberger E, Virbulis J, von Ammon W Journal of Crystal Growth, 250(1-2), 183, 2003 |
| 9 |
Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations Kalaev VV, Lukanin DP, Zabelin VA, Makarov YN, Virbulis J, Dornberger E, von Ammon W Journal of Crystal Growth, 250(1-2), 203, 2003 |
| 10 |
Global parameterization of multiple point-defect dynamics models in silicon Frewen RA, Sinno T, Dornberger E, Hoelzl R, von Ammon W, Bracht H Journal of the Electrochemical Society, 150(11), G673, 2003 |