| 1 |
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
Utrilla AD, Grossi DF, Reyes DF, Gonzalo A, Braza V, Ben T, Gonzalez D, Guzman A, Hierro A, Koenraad PM, Ulloa JM
Applied Surface Science, 444, 260, 2018 |
| 2 |
Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates
Akazawa H
Applied Surface Science, 436, 887, 2018 |
| 3 |
Thermal transport within quantum-dot nanostructured semiconductors
Huang MJ, Chang TM
International Journal of Heat and Mass Transfer, 55(11-12), 2800, 2012 |
| 4 |
Phase dynamics and wetting layer formation mechanisms of pattern-directed phase separation in binary polymer mixture films with asymmetry compositions
Li JL, Yan LT, Xie XM
Polymer, 50(9), 2172, 2009 |
| 5 |
Search for a wetting layer in thin film growth of para-hexaphenyl on KCl(001)
Frank P, Hemandez-Sosa G, Sitter H, Winkler A
Thin Solid Films, 516(10), 2939, 2008 |
| 6 |
Composition and atomic ordering of Ge/Si(001) wetting layers
Malachias A, Metzger TH, Stoffel M, Schmidt OG, Holy V
Thin Solid Films, 515(14), 5587, 2007 |
| 7 |
Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy
Sfaxi L, Bouzaiene L, Sghaier H, Maaref H
Journal of Crystal Growth, 293(2), 330, 2006 |
| 8 |
Free energy balance for three fluid phases in a capillary of arbitrarily shaped cross-section: capillary entry pressures and layers of the intermediate-wetting phase
van Dijke MIJ, Lago A, Sorbie KS, Araujo M
Journal of Colloid and Interface Science, 277(1), 184, 2004 |
| 9 |
Growth of self-assembled AlxInyGa1-x-yN quantum dots by MOVPE
Perez-Solorzano V, Groning A, Schweizer H, Jetter M
Journal of Crystal Growth, 272(1-4), 186, 2004 |
| 10 |
Three-phase capillary entry conditions in pores of noncircular cross-section
van Dijke MIJ, Sorbie KS
Journal of Colloid and Interface Science, 260(2), 385, 2003 |
