Solid-State Electronics

Solid-State Electronics, Vol.100 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (13 articles)

1 - 6	Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition Yen CF, Lee MK
7 - 10	Analysis of the core-shell interface between zinc-blende GaP and wurtzite ZnO Laurencikova A, Elias P, Hasenohrl S, Kovac J, Mikolasek M, Vavra I, Novak J
11 - 14	Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator Kim DK, Sindhuri V, Jo YW, Kim DS, Kang HS, Lee JH, Lee YS, Bae Y, Hahm SH, Lee JH
15 - 19	Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs Zhou XY, Feng ZH, Wang L, Wang YG, Lv YJ, Dun SB, Cai SJ
20 - 26	Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode Kopytko M, Jozwikowski K, Rogalski A
27 - 32	A novel method for measuring parasitic resistance in high electron mobility transistors Yang Z, Wang JY, Li XP, Zhang B, Zhao J, Xu Z, Wang MJ, Yu M, Yang ZC, Wu WG, Zhang YM, Zhang JC, Ma XH, Hao Y
33 - 38	A novel BEM-LIGBT with high current density on thin SOI layer for 600 V HVIC Zhu J, Sun WF, Chen J, Lu SL, Zhang S, Su W
39 - 44	Incremental resistance programming of programmable metallization cells for use as electronic synapses Mahalanabis D, Barnaby HJ, Gonzalez-Velo Y, Kozicki MN, Vrudhula S, Dandamudi P
45 - 48	Distinction between interfacial layer effect and trap passivation effect of N-2 plasma treatment on LTPS-TFTs Ma WCY
49 - 53	Electrical characteristics and optimization of extended-drain MOS transistor with dual-workfunction-gate for mixed-signal applications Baek KJ, Na KY, Kim YS
54 - 60	Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback Grassi R, Gnudi A, Di Lecce V, Gnani E, Reggiani S, Baccarani G
61 - 70	The performance studies on swallow-tailed naphthalene diimide derivatives in solution processed inverted bulk heterojunction solar cells Turkmen G, Sarica H, Erten-Ela S
71 - 78	Compact modeling of the shift between classical and quantum threshold voltages in a III-V nanowire Hiblot G, Rathay Q, Boeuf F, Ghibaudo G