Solid-State Electronics

Solid-State Electronics, Vol.102 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (13 articles)

1 - 1	SELECTED PAPERS FROM ESSDERC 2013 Foreword Dascalu D
2 - 11	Emerging memories Baldi L, Bez R, Sandhu G
12 - 24	Reconfigurable nanowire electronics - A review Weber WM, Heinzig A, Trommer J, Martin D, Grube M, Mikolajick T
25 - 41	Characterization and modeling of electrical stress degradation in STI-based integrated power devices Reggiani S, Barone G, Gnani E, Gnudi A, Baccarani G, Poli S, Wise R, Chuang MY, Tian WD, Pendharkar S, Denison M
42 - 45	Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs Lee S, Woo J, Lee D, Cha E, Hwang F
46 - 51	Towards on-chip clocking of perpendicular Nanomagnetic Logic Becherer M, Kiermaier J, Breitkreutz S, Eichwald I, Ziemys G, Csaba G, Schmitt-Landsiedel D
52 - 58	Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip Nakane R, Shuto Y, Sukegawa H, Wen ZC, Yamamoto S, Mitani S, Tanaka M, Inomata K, Sugahara S
59 - 68	Color recognition sensor in standard CMOS technology Batistell G, Zhang VC, Sturm J
69 - 75	A study on HfO2 RRAM in HRS based on I-V and RTN analysis Puglisi FM, Pavan P, Padovani A, Larcher L
76 - 81	Compact modeling of STT-MTJ devices Xu ZH, Yang CG, Mao MQ, Sutaria KB, Chakrabarti C, Cao Y
82 - 86	Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model Morita Y, Mori T, Migita S, Mizubayashi W, Tanabe A, Fukuda K, Matsukawa T, Endo K, O'uchi S, Liu YX, Masahara M, Ota H
87 - 92	Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates Papageorgiou V, Khalid A, Li C, Steer MJ, Cumming DRS
93 - 97	Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs Yoshida T, Kobayashi K, Otsuji T, Suemitsu T