Solid-State Electronics

Solid-State Electronics, Vol.106 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (12 articles)

1 - 11	Sub-threshold 10T SRAM bit cell with read/write XY selection Feki A, Allard B, Turgis D, Lafont JC, Drissi FT, Abouzeid F, Haendler S
12 - 17	Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS-HEMTs Downey BP, Meyer DJ, Katzer DS, Marron TM, Pan M, Gao X
18 - 26	An efficient BTX sensor based on ZnO nanoflowers grown by CBD method Acharyya D, Bhattacharyya P
27 - 33	Static impedance behavior of programmable metallization cells Rajabi S, Saremi M, Barnaby HJ, Edwards A, Kozicki MN, Mitkova M, Mahalanabis D, Gonzalez-Velo Y, Mahmud A
34 - 43	Numerical study of inhomogeneity effects on Hall measurements of graphene films Lee K, Asbeck P
44 - 49	Doping induces large variation in the electrical properties of MoS2 monolayers Eshun K, Xiong HD, Yu S, Li QL
50 - 53	High accuracy thermal resistance measurement in GaN/InGaN laser diodes Wen PY, Li DY, Zhang SM, Liu JP, Zhang LQ, Zhou K, Feng MX, Li ZC, Tian AQ, Yang H
54 - 62	On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices Djezzar B, Tahi H, Benabdelmoumene A, Chenouf A, Goudjil M, Kribes Y
63 - 67	Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties Kolkovsky V, Lukat K, Kurth E, Kunath C
68 - 77	Palladium contamination in silicon Polignano ML, Mica I, Ceresoli M, Codegoni D, Somaini F, Bianchi I, Volonghi D
78 - 80	Obtaining DC and AC isothermal electrical characteristics for RF MOSFET Sahoo AK, Fregonese S, Scheer P, Celi D, Juge A, Zimmer T
81 - 86	Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET Peng C, Hu ZY, Ning BX, Dai LH, Bi DW, Zhang ZX