Solid-State Electronics

Solid-State Electronics, Vol.112 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (13 articles)

1 - 6	Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy Achour H, Cretu B, Simoen E, Routoure JM, Carin R, Benfdila A, Aoulaiche M, Claeys C
7 - 12	Dual Ground Plane for high-voltage MOSFET in UTBB FDSOI technology Litty A, Ortolland S, Golanski D, Cristoloveanu S
13 - 18	In depth characterization of electron transport devices in 14 nm FD-SOI CMOS Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G
19 - 23	Enhanced dynamic threshold voltage UTBB SOI nMOSFETs Sasaki KRA, Manini MB, Simoen E, Claeys C, Martino JA
24 - 28	Role of the gate in ballistic nanowire SOI MOSFETs Mangla A, Sallese JM, Sampedro C, Gamiz F, Enz C
29 - 36	Parasitic bipolar effect in ultra-thin FD SOI MOSFETs Liu FY, Ionica I, Bawedin M, Cristoloveanu S
37 - 45	Consistent low-field mobility modeling for advanced MOS devices Stanojevic Z, Baumgartner O, Filipovic L, Kosina H, Karner M, Kernstock C, Prause P
46 - 50	Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films Osintsev D, Sverdlov V, Selberherr S
51 - 55	Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism Martino MD, Neves F, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E, Thean A, Claeys C
56 - 67	Future of nano CMOS technology Iwai H
68 - 77	Mechanical characterization and modelling of Lorentz force based MEMS magnetic field sensors Gkotsis P, Lara-Castro M, Lopez-Huerta F, Herrera-May AL, Raskin JP
78 - 84	Trigate nanowire MOSFETs analog figures of merit Kilchytska V, Makovejev S, Barraud S, Poiroux T, Raskin JP, Flandre D
85 - 98	3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects Holtij T, Kloes A, Iniguez B