Solid-State Electronics

Solid-State Electronics, Vol.118 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (12 articles)

1 - 3	Determination of minority carrier diffusion length of sprayed-Cu2ZnSnS4 thin films Courel M, Valencia-Resendiz E, Pulgarin-Agudelo FA, Vigil-Galan O
4 - 11	Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs Ioannidis EG, Haendler S, Josse E, Planes N, Ghibaudo G
12 - 17	Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer Atmaca G, Ardali S, Tiras E, Malin T, Mansurov VG, Zhuravlev KS, Lisesivdin SB
18 - 25	Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz Gu SY, Min J, Taur Y, Asbeck PM
26 - 29	Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism Brouzet V, Salem B, Periwal P, Alcotte R, Chouchane F, Bassani F, Baron T, Ghibaudo G
30 - 35	Photocurrent spectra of semi-insulating GaAs M-S-M diodes: Role of the contacts Dubecky F, Oswald J, Kindl D, Hubik P, Dubecky M, Gombia E, Sagatova A, Bohacek P, Sekacova M, Necas V
36 - 40	Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna Kasjoo SR, Singh AK, Isa SSM, Ramli MM, Isa MM, Ahmad N, Nor NIM, Khalid N, Song AM
41 - 45	Synthesis of nitrogen-doped ZnO nanoparticles by RF thermal plasma Hiragino Y, Tanaka T, Takeuchi H, Takeuchi A, Lin J, Yoshida T, Fujita Y
46 - 55	Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies Gu QJ, Li JC, Tang A
56 - 60	A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n(+)-based RRAMs Villena MA, Roldan JB, Gonzalez MB, Gonzalez-Rodelas P, Jimenez-Molinos F, Campabadal F, Barrera D
61 - 65	Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors Gawron W, Martyniuk P, Keblowski A, Kolwas K, Stepien D, Piotrowski J, Madejczyk P, Pedzinska M, Rogalski A
66 - 77	III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond Datta K, Khosru QDM