| 1 - 11 |
Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink
Xue P, Fu GC, Zhang D |
| 12 - 15 |
Efficient light output power for InGaP/GaAs heterojunction bipolar transistors incorporated with InGaAs quantum wells
Huang TH, Wu MC |
| 16 - 19 |
Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2
Kwon HM, Kim DK, Lim SK, Hwang HC, Son SW, Park JH, Park WS, Kim JS, Shin CS, Park WK, Lee JH, Kim T, Kim DH |
| 20 - 24 |
Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power
Korolev AM, Shulga VM, Turutanov OG, Shnyrkov VI |
| 25 - 33 |
A 72% error reduction scheme based on temperature acceleration for long-term data storage applications: Cold flash and millennium memories
Yamazaki S, Iwasaki TO, Hachiya S, Takahashi T, Takeuchi K |
| 34 - 40 |
On the turn-around phenomenon in n-MOS transistors under NBTI conditions
Benabdelmoumene A, Djezzar B, Chenouf A, Tahi H, Zatout B, Kechouane M |
| 41 - 46 |
Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level
Mnatsakanov TT, Levinshtein ME, Tandoev AG, Yurkov SN, Palmour JW |
| 47 - 53 |
Estimation of the average junction temperature of two phosphors-converted white LED array based on (B plus Y plus R)/B ratio
Ke HL, Jing L, Hao J, Gao Q, Wanga Y, Wang XX, Sun Q, Xu ZJ |
| 54 - 61 |
An improved model for current voltage characteristics of submicron SiC MESFETs
Riaz M, Ahmed MM, Munir U |
