| 1 - 7 |
Size and temperature dependence of the electron-phonon scattering by donors in nanowire transistors
Bescond M, Carrillo-Nunez H, Berrada S, Cavassilas N, Lannoo M |
| 8 - 12 |
Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs
Kim SK, Lee J, Geum DM, Park MS, Choi WJ, Choi SJ, Kim DH, Kim S, Kim DM |
| 13 - 17 |
The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance
Fan ST, Yan JY, Lai DC, Liu CW |
| 18 - 22 |
Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics
Chang FK, Huang YC, Jeng JS, Chen JS |
| 23 - 31 |
Charge-based compact analytical model for triple-gate junctionless nanowire transistors
Avila-Herrera F, Paz BC, Cerdeira A, Estrada M, Pavanello MA |
| 32 - 36 |
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors
Lee JG, Kim HS, Seo KS, Cho CH, Cha HY |
| 37 - 44 |
Abrupt PN junctions: Analytical solutions under equilibrium and non-equilibrium
Khorasani S |
| 45 - 51 |
Bulk FinFETs with body spacers for improving fin height variation
Wei X, Zhu HL, Zhang YB, Zhao C |
| 52 - 55 |
Single-mode tapered terahertz quantum cascade lasers with lateral gratings
Yao C, Xu TH, Wan WJ, Li H, Cao JC |
| 56 - 63 |
Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method
Toumi S, Ouennoughi Z, Strenger KC, Frey L |
| 64 - 69 |
Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate
Xiang JJ, Zhang YB, Li TT, Wang XL, Gao JF, Yin HX, Li JF, Wang WW, Ding YQ, Xu CY, Zhao C |
| 70 - 74 |
Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts
Takhar K, Kumar SA, Meer M, Upadhyay BB, Upadhyay P, Khachariya D, Ganguly S, Saha D |
