| 1 - 4 |
Analytical approximation of the InGaZnO thin-film transistors surface potential
Colalongo L |
| 5 - 9 |
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach
Hung CW, Chang CH, Chen WC, Chen CC, Chen HI, Tsai YT, Tsai JH, Liu WC |
| 10 - 15 |
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs
Qin CL, Wang GL, Kolahdouz M, Luo J, Yin HX, Yang P, Li JF, Zhu HL, Chao Z, Ye TC, Radamson HH |
| 16 - 23 |
Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric
Saeidi A, Biswas A, Ionescu AM |
| 24 - 27 |
Surface plasmon enhanced the responsivity of the ZnO/Pt nanoparticles/ZnO sandwich structured photodetector via optimizing the thickness of the top ZnO layer
Guo ZX, Jiang DY, Zhao M, Guo F, Pei JN, Liu RS, Sun L, Hu N, Zhang GY |
| 28 - 34 |
Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology
Lin CY, Chiu YL |
| 35 - 41 |
The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6
Kil YH, Yuk SH, Kim JH, Kim TS, Kim YT, Choi CJ, Shim KH |
| 42 - 45 |
Stable single-mode distributed feedback quantum cascade lasers at lambda similar to 4.25 mu m with low power consumption
Jia ZW, Wang LJ, Zhang JC, Liu FQ, Zhuo N, Zhai SQ, Liu JQ, Wang ZG |
| 46 - 53 |
Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs
Hemmat M, Kamal M, Afzali-Kusha A, Pedram M |
| 54 - 57 |
TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs
Yoon YJ, Seo JH, Cho MS, Kang HS, Won CH, Kang IM, Lee JH |
| 58 - 63 |
Behavior of subthreshold conduction in junctionless transistors
Park SJ, Jeon DY, Montes L, Mouis M, Barraud S, Kim GT, Ghibaudo G |
