Solid-State Electronics

Solid-State Electronics, Vol.126 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

1 - 4	Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon De Iacovo A, Ferrone A, Colace L, Minotti A, Maiolo L, Pecora A
5 - 9	ZnO nanorods/graphene/Ni/Au hybrid structures as transparent conductive layer in GaN LED for low work voltage and high light extraction Xu K, Xie YY, Maa HL, Dua YX, Zeng FG, Ding P, Gao ZY, Xu C, Sun J
10 - 13	A compact model of the reverse gate-leakage current in GaN-based HEMTs Ma XY, Huang JK, Fang JL, Deng WL
14 - 22	An improved energy efficient SRAM cell for access over a wide frequency range Nayak D, Acharya DP, Mahapatra K
23 - 31	On the design of GaN vertical MESFETs on commercial LED sapphire wafers Atalla MRM, Elahi AMN, Mo C, Jiang ZY, Liu J, Ashok S, Xu J
32 - 35	Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure Wang W, Yu XX, Zhou JJ, Chen DJ, Zhang K, Kong C, Lu HY, Kong YC, Li ZH, Chen TS
36 - 45	Improvement in optical performance and color uniformity by optimizing the remote phosphor caps geometry for chip-on-board light emitting diodes Li JS, Li ZT, Li Z, Tang Y, Ding XR, Yu BH
46 - 50	A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer Liaw YG, Liao WS, Wang MC, Lin CL, Zhou B, Gu HS, Li DS, Zou XC
51 - 58	Modeling of the charge transfer in a lateral drift field photo detector Driewer A, Hosticka BJ, Spickermann A, Vogt H
59 - 66	Variable temperature performance of a fully screen printed transistor switch Zambou S, Magunje B, Rhyme S, Walton SD, Idowu MF, Unigbe D, Britton DT, Harting M
67 - 74	Multibias and thermal behavior of microwave GaN and GaAs based HEMTs Alim MA, Rezazadeh AA, Gaquiere C
75 - 80	Controllable design of solid-state perovskite solar cells by SCAPS device simulation Tan K, Lin P, Wang G, Liu Y, Xu ZC, Lin YX
81 - 86	A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors Moldovan O, Castro-Carranza A, Cerdeira A, Estrada M, Barquinha P, Martins R, Fortunato E, Miljakovic S, Iniguez B
87 - 91	Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment Kim MH, Choi MJ, Kimura K, Kobayashi H, Choi DK
92 - 95	Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain Kise N, Kinoshita H, Yukimachi A, Kanazawa T, Miyamoto Y
96 - 103	Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor Srivastava A, Fahad MS
104 - 108	A novel single-stranded DNA detection method based on organic semiconductor heterojunction Gu W, Liu HB, Zhang X, Zhang H, Chen X, Wang J
109 - 114	Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell Huang TH, Lo H, Lo C, Wu MC, Lour WS
115 - 124	The causes of GaN HEMT bell-shaped transconductance degradation Chen CH, Sadler R, Wang DV, Hou D, Yang YF, Yau W, Sutton W, Shim J, Wang SG, Duong A
125 - 129	Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories Chiu SF, Xu Y, Ji XL, Yan F
130 - 135	Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric Jiang CS, Liang RR, Wang J, Xu J
136 - 142	Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method Shin YH, Yun I
143 - 151	Circuit model for single-energy-level trap centers in FETs Albahrani SA, Parker A, Heimlich M
152 - 157	Layout optimization of GGISCR structure for on-chip system level ESD protection applications Zeng J, Dong SR, Wong H, Hu T, Li X
158 - 162	Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET Ioannidis EG, Pflanzl WC, Stueckler E, Vescoli V, Carniello S, Seebacher E
163 - 169	Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Essa Z, Pelletier B, Morin P, Boulenc P, Pakfar A, Tavernier C, Wacquant F, Zechner C, Juhel M, Autran JL, Cristiano F
170 - 174	Ambient effect on thermal stability of amorphous InGaZnO thin film transistors Xu JE, Wu Q, Xu L, Xie HT, Liu GC, Zhang L, Dong CY