| 1 - 4 |
Depletion effect of polycrystalline-silicon gate electrode by phosphorus deactivation
Jeon W, Ahn JH |
| 5 - 12 |
Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect
d'Alessandro V |
| 13 - 19 |
Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique
Berthet F, Petitdidier S, Guhel Y, Trolet JL, Mary P, Vivier A, Gaquiere C, Boudart B |
| 20 - 25 |
Steep sub-threshold current slope (similar to 2 mV/dec) Pt/Cu2S/Pt gated memristor with l(on)/I-off > 100
Mou NI, Zhang Y, Pai P, Tabib-Azar M |
| 26 - 31 |
2.5 GHz integrated graphene RF power amplifier on SiC substrate
Hanna T, Deltimple N, Khenissa MS, Pallecchi E, Happy H, Fregonese S |
| 32 - 37 |
Design and fabrication of a low insertion loss capacitive RF MEMS switch with novel micro-structures for actuation
Li MH, Zhao JH, You Z, Zhao GH |
| 38 - 44 |
CdS/CdSe-sensitized solar cell based on Al-doped ZnO nanoparticles prepared by the decomposition of zinc acetate solid solution
Deng JP, Wang MQ, Ye W, Fang JF, Zhang PC, Yang YP, Yang Z |
| 45 - 50 |
Realization of Silicon nanotube tunneling FET on junctionless structure using single and multiple gate workfunction
Ambika R, Keerthana N, Srinivasan R |
| 51 - 56 |
Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages
Guan XY, Lee HK, Lee SH, Yu JS |
| 57 - 60 |
Light-emitting diodes fabricated on an electrical conducting flexible substrate
Choi WS, Kim WJ, Park SH, Cho SO, Lee JK, Park JB, Ha JS, Chung TH, Jeong T |
| 61 - 64 |
Influence of the morphology of the copper(II) phthalocyanine thin film on the performance of organic field-effect transistors
Xu J, Liu XQ, Wang HL, Hou WL, Zhao LL, Zhang HQ |
