Solid-State Electronics

Solid-State Electronics, Vol.130 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (13 articles)

1 - 3	Paper-based, sound driven piezoelectric ZnO nanowire devices Bu IYY
4 - 8	Analytical model for thin-film SOI PIN-diode leakage current Schmidt A, Dreiner S, Vogt H, Goehlich A, Paschen U
9 - 14	Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires Larrieu G, Guerfi Y, Han XL, Clement N
15 - 19	Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI Song L, Hu ZY, Liu ZL, Xin HW, Zhang ZX, Zou SC
20 - 27	Pt nanoparticles functionalized 3D SnO2 nanoflowers for gas sensor application Liu YL, Huang J, Yang JD, Wang SR
28 - 32	Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate Sun H, Liu MH, Liu P, Lin XN, Cui XL, Chen JG, Chen DM
33 - 40	A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects Raksharam, Dutta AK
41 - 44	Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors Kuo WC, Lee MJ, Wu ML, Lee CC, Tsao IY, Chang JY
45 - 48	Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy Avakyants LP, Aslanyan AE, Bokov PY, Chervyakov AV, Polozhentsev KY
49 - 56	Performance improvement of IF(CN2)(2) meta based N-channel OTFTs and their integration into a stable CMOS inverter Bebiche S, Bouhadda I, Mohammed-Brahim T, Coulon N, Bergamini JF, Poriel C, Jacques E
57 - 62	Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee TI, Seo Y, Moon J, Ahn HJ, Yu HY, Hwang WS, Cho BJ
63 - 69	Analysis of the impedance field of saturated MOSFETs and drain thermal noise Lee KY
70 - 74	Charge-based MOSFET model based on the Hermite interpolation polynomial Colalongo L, Richelli A, Kovacs Z