| 1 - 8 |
Optical modulation characteristics of graphene supercapacitors at oblique incidence in visible-infrared region
Wang H, Zhou YX, Xu XL, Zhu LP, Xia W, Qi M, Bai JT, Ren ZY |
| 9 - 19 |
The development of differential inductors using double air-bridge structure based on integrated passive device technology
Li Y, Yao Z, Fu XQ, Li ZM, Shan FK, Wang C |
| 20 - 23 |
Leakage current conduction in metal gate junctionless nanowire transistors
Oproglidis TA, Karatsori TA, Barraud S, Ghibaudo G, Dimitriadis CA |
| 24 - 29 |
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Lime F, Avila-Herrera F, Cerdeira A, Iniguez B |
| 30 - 33 |
Fabrication of resistive switching memory structure using double-sided-anodized porous alumina
Morishita Y, Hosono T, Ogawa H |
| 34 - 38 |
Multi-level resistive switching characteristics of W/Co:TiO2/fluorine-doped tin oxide (FTO) structures
Yang Z, Luo Z, Tang HT, Huang B, Xie WG |
| 39 - 44 |
Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
Takhar K, Meer M, Upadhyay BB, Ganguly S, Saha D |
| 45 - 52 |
An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors
Shen YF, Cui J, Mohammadi S |
| 53 - 64 |
Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-mu m pixel-pitch indirect X-ray imagers
Cheng MH, Zhao CM, Kanicki J |
