| 1 - 5 |
Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays
Bae MS, Park C, Shin D, Lee SM, Yun I |
| 6 - 9 |
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics
Wang RZ, Wu SL, Li XY, Zhang JT |
| 10 - 16 |
Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
Jhang PC, Lu CP, Shieh JY, Yang LW, Yang T, Chen KC, Lu CY |
| 17 - 24 |
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation
Hain F, Graef M, Iniguez B, Kloes A |
| 25 - 30 |
A new high-voltage interconnection shielding method for SOI monolithic ICs
Zhang L, Zhu J, Sun WF, Huang XQ, Zhao MN, Chen JJ, Shi LX, Chen J, Ding DS |
| 31 - 37 |
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNX passivation
Bai ZY, Du JF, Liu Y, Xin Q, Liu Y, Yu Q |
| 38 - 44 |
Forming operation in Ge-rich GexSbyTez phase change memories
Palumbo E, Zuliani P, Borghi M, Annunziata R |
| 45 - 52 |
Study on the influence of gamma-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET
Hao MR, Hu HY, Wang B, Liao CG, Kang HY, Su H |
| 53 - 63 |
Van-der-Pauw measurement on devices with four contacts and two orthogonal mirror symmetries
Ausserlechner U |
| 64 - 69 |
Reliability improvement in GaN HEMT power device using a field plate approach
Wu WH, Lin YC, Chin PC, Hsu CC, Lee JH, Liu SC, Maa JS, Iwai H, Chang EY, Hsu HT |
| 70 - 77 |
Low frequency noise investigation of 2-3 mu m GaSb-based laser diodes
Glemza J, Pralgauskaite S, Palenskis V, Matukas J |
| 78 - 82 |
GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates
Mou WJ, Zhao LN, Chen LL, Yan DW, Ma HR, Yang GF, Gu XF |
| 83 - 87 |
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
Tsui BY, Cheng JC, Yen CT, Lee CY |
